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عدد 2 - K5A50D
TK5A50D MOSFET
Type Designator: TK5A50D
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Maximum Power Dissipation (Pd): 35
W
Maximum Drain-Source Voltage |Vds|: 500
V
Maximum Gate-Source Voltage |Vgs|: 30
V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.4
V
Maximum Drain Current |Id|: 5
A
Maximum Junction Temperature (Tj): 150
°C
Maximum Drain-Source On-State Resistance (Rds): 1.5
Ohm
TK6A65D MOSFET
Type Designator: TK6A65D
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Maximum Power Dissipation (Pd): 45
W
Maximum Drain-Source Voltage |Vds|: 650
V
Maximum Gate-Source Voltage |Vgs|: 30
V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4
V
Maximum Drain Current |Id|: 6
A
Maximum Junction Temperature (Tj): 150
°C
Total Gate Charge (Qg): 20
nC
Maximum Drain-Source On-State Resistance (Rds): 1.11
Ohm
************************
TK5A50D MOSFET
Type Designator: TK5A50D
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Maximum Power Dissipation (Pd): 35
W
Maximum Drain-Source Voltage |Vds|: 500
V
Maximum Gate-Source Voltage |Vgs|: 30
V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.4
V
Maximum Drain Current |Id|: 5
A
Maximum Junction Temperature (Tj): 150
°C
Maximum Drain-Source On-State Resistance (Rds): 1.5
Ohm
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